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IRFD224PBF - Vishay

Description: MOSFET N-Chan 250V 0.63 Amp

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IRFD224PBF Details

  • Manufacturer Part Number:

    IRFD224PBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DIP

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    60 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    0.63 A

  • Drain-source On Resistance-Max:

    1.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1 W

  • Pulsed Drain Current-Max (IDM):

    5 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFD224PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFD224PBF is -55°C to 175°C, as specified in the datasheet. However, it's recommended to derate the power dissipation above 150°C to ensure reliable operation.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The datasheet provides thermal resistance values, which can be used to calculate the required heat sink size and thermal interface material.
  • The recommended gate drive voltage for the IRFD224PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI.
  • To protect the IRFD224PBF from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
  • The recommended PCB layout and spacing for the IRFD224PBF should minimize parasitic inductance and capacitance. A good practice is to use a symmetrical layout, keep the gate and source pins close together, and use a solid ground plane to reduce noise and EMI.

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IRFD224PBF Overview

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