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IRFH7911TRPBF - Infineon

Description: MOSFET 2N-CH 30V 13A/28A PQFN

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IRFH7911TRPBF Details

  • Manufacturer Part Number:

    IRFH7911TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    52 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    12 mJ

  • Case Connection:

    DRAIN SOURCE

  • Configuration:

    SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.0086 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    110 pF

  • JESD-30 Code:

    R-PQFP-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -50 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLATPACK

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.4 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    QUAD

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFH7911TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFH7911TRPBF is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and monitoring junction temperature.
  • To minimize EMI, it's recommended to use a multi-layer PCB with a solid ground plane, keep the power traces short and wide, and use shielding or filtering components as needed.
  • Yes, the IRFH7911TRPBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching characteristics, gate drive requirements, and PCB layout to ensure reliable operation.
  • To protect the device, use overvoltage protection (OVP) and overcurrent protection (OCP) circuits, such as zener diodes, TVS diodes, or dedicated OVP/OCP ICs, and ensure that the device is operated within its specified voltage and current ratings.

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IRFH7911TRPBF Overview

Use the download button to access the IRFH7911TRPBF 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Power Field-Effect Transistor, 13A I(D), 30V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET