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IRFHS9301TRPBF - Infineon

Description: IRFHS9301TRPBF P-Channel MOSFET, 6 A, 30 V HEXFET, 7-Pin PQFN Infineon

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IRFHS9301TRPBF - Infineon PCB footprint - Other - Other - PG-TSDSON-6
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IRFHS9301TRPBF - Infineon  - 3D model - Other - PG-TSDSON-6
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IRFHS9301TRPBF Details

  • Manufacturer Part Number:

    IRFHS9301TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.037 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    79 pF

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.1 W

  • Pulsed Drain Current-Max (IDM):

    52 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFHS9301TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFHS9301TRPBF is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal design and layout guidelines, including providing adequate heat sinking and thermal management, and ensuring that the device is operated within its specified temperature range.
  • The recommended PCB layout and thermal design for the IRFHS9301TRPBF involves using a multi-layer PCB with a solid ground plane, placing the device near a heat sink or thermal pad, and ensuring good thermal conductivity between the device and the heat sink.
  • When handling the IRFHS9301TRPBF, it's essential to follow proper safety precautions, including using appropriate personal protective equipment, ensuring a safe working distance from the device, and following proper testing and measurement procedures.
  • To mitigate EMI and RFI when using the IRFHS9301TRPBF, it's essential to follow proper PCB layout and design guidelines, including using shielding, filtering, and grounding techniques, and ensuring that the device is operated within its specified frequency range.

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IRFHS9301TRPBF Overview

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Power Field-Effect Transistor, 6A I(D), 30V, 0.037ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET