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IRFIB7N50APBF - Vishay

Description: MOSFET N-CH 500V 6.6A TO220-3

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IRFIB7N50APBF Details

  • Manufacturer Part Number:

    IRFIB7N50APBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    275 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    6.6 A

  • Drain-source On Resistance-Max:

    0.52 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    44 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFIB7N50APBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFIB7N50APBF is -55°C to 175°C.
  • The IRFIB7N50APBF is a fast-switching IGBT, designed for high-frequency applications.
  • The maximum collector-emitter voltage (Vce) rating for the IRFIB7N50APBF is 600V.
  • Yes, the IRFIB7N50APBF is designed for high-power applications, with a maximum collector current rating of 50A.
  • The typical turn-on time for the IRFIB7N50APBF is around 100ns, and the typical turn-off time is around 200ns.

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IRFIB7N50APBF Overview

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Part Image IRFIB7N50A Vishay Intertechnologies

Power Field-Effect Transistor, 6.6A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRFIB7N50APBF Vishay Siliconix

Power Field-Effect Transistor, 6.6A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRFIB7N50A Vishay Siliconix

Power Field-Effect Transistor, 6.6A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULLPAK-3