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IRFP150N - Infineon

Description: N-channel MOSFET,IRFP150N 42A 100V

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IRFP150N - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC_1-ren1
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IRFP150N - Infineon  - 3D model - Transistor Outline, Vertical - TO-247AC_1-ren1
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IRFP150N Details

  • Manufacturer Part Number:

    IRFP150N

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.3

  • Additional Feature:

    AVALANCHE RATED, FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    420 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    42 A

  • Drain-source On Resistance-Max:

    0.036 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    225

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    140 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP150N Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFP150N is typically defined by the manufacturer as the region where the device can operate safely without damage. This information is usually provided in the datasheet or application notes. For the IRFP150N, the SOA is typically limited by the maximum voltage and current ratings, as well as the thermal limitations of the device.
  • To ensure proper thermal management of the IRFP150N, it is essential to provide adequate heat sinking and cooling. This can be achieved by using a heat sink with a sufficient thermal conductivity, ensuring good thermal contact between the device and the heat sink, and providing adequate airflow to dissipate the heat. The thermal resistance of the device and the heat sink should also be considered to ensure that the junction temperature remains within the recommended operating range.
  • The recommended gate drive circuits for the IRFP150N typically involve using a gate driver IC or a discrete transistor to provide a high-current, low-impedance drive to the gate terminal. The gate drive circuit should be designed to provide a fast rise and fall time, as well as a sufficient voltage swing to fully enhance or deplete the channel. The specific gate drive circuit requirements may vary depending on the application and the desired switching performance.
  • To protect the IRFP150N from overvoltage and overcurrent conditions, it is essential to implement proper protection circuits and design considerations. This may include using voltage clamping devices, such as zener diodes or transient voltage suppressors, to limit the voltage across the device. Additionally, current sensing and limiting circuits can be used to prevent excessive current from flowing through the device. The device should also be operated within its recommended operating conditions and derated accordingly to ensure reliable operation.
  • The recommended PCB layout and design considerations for the IRFP150N include using a multilayer PCB with a solid ground plane, minimizing the lead length and inductance of the gate and drain connections, and using a low-impedance power bus to minimize voltage drops. The device should also be placed in a location that minimizes thermal coupling to other components and ensures good airflow for heat dissipation. Additionally, the PCB should be designed to minimize electromagnetic interference (EMI) and ensure that the device operates within its recommended operating conditions.

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IRFP150N Overview

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Part Image IRFP150NPBF International Rectifier

Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Part Image SMW60N10 Vishay Siliconix

Power Field-Effect Transistor, 60A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Part Image IRFP150N Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 44A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image STW60N10 STMicroelectronics

Power Field-Effect Transistor, 60A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image BUZ345 Infineon Technologies AG

Power Field-Effect Transistor, 41A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA

For a full list of alternate parts for IRFP150N, check out Findchips.com