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IRFP150NPBF - Infineon

Description: IRFP150NPBF N-Channel MOSFET, 42 A, 100 V HEXFET, 3-Pin TO-247AC Infin

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PCB Footprints
IRFP150NPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC-1
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3D Models
IRFP150NPBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-247AC-1
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IRFP150NPBF Details

  • Manufacturer Part Number:

    IRFP150NPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    420 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    42 A

  • Drain-source On Resistance-Max:

    0.036 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    140 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP150NPBF Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFP150NPBF is typically defined by the manufacturer as the region where the device can operate safely without damage. This information is usually provided in the datasheet or application notes. For the IRFP150NPBF, the SOA is typically limited by the maximum drain-source voltage (Vds) and drain current (Id).
  • To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material (TIM) such as thermal paste or thermal tape, and ensuring good contact between the device and the heat sink. Additionally, the PCB design should allow for good airflow and heat dissipation.
  • The recommended gate drive voltage for the IRFP150NPBF is typically between 10V to 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's essential to consult the datasheet and application notes for more information.
  • To protect the IRFP150NPBF from electrostatic discharge (ESD), it's essential to handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and storing the device in an ESD-safe environment. Additionally, the PCB design should include ESD protection components, such as TVS diodes or ESD protection arrays.
  • The maximum allowed drain-source voltage (Vds) for the IRFP150NPBF is 150V. Exceeding this voltage can damage the device.

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IRFP150NPBF Overview

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Part Image IRFP150NPBF International Rectifier

Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Part Image SMW60N10 Vishay Siliconix

Power Field-Effect Transistor, 60A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Part Image IRFP150N Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 44A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image STW60N10 STMicroelectronics

Power Field-Effect Transistor, 60A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image BUZ345 Infineon Technologies AG

Power Field-Effect Transistor, 41A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA

For a full list of alternate parts for IRFP150NPBF, check out Findchips.com