AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas):
315 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
200 V
Drain Current-Max (ID):
30 A
Drain-source On Resistance-Max:
0.075 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-247AC
JESD-30 Code:
R-PSFM-T3
JESD-609 Code:
e3
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
214 W
Pulsed Drain Current-Max (IDM):
120 A
Qualification Status:
Not Qualified
Surface Mount:
NO
Terminal Finish:
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form:
THROUGH-HOLE
Terminal Position:
SINGLE
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
IRFP250NPBF Frequently Asked Questions (FAQs)
The maximum safe operating area (SOA) for the IRFP250NPBF is typically defined by the manufacturer as the region where the device can operate safely without damage. This information is usually provided in the datasheet or in a separate application note. For the IRFP250NPBF, the SOA is typically limited by the maximum drain-source voltage, drain current, and power dissipation.
To ensure proper thermal management of the IRFP250NPBF, it is essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material (TIM) such as thermal paste or thermal tape, and ensuring good contact between the device and the heat sink. Additionally, the PCB design should allow for good airflow and heat dissipation.
The recommended gate drive voltage for the IRFP250NPBF is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can help to reduce switching losses and improve the device's overall performance.
To protect the IRFP250NPBF from electrostatic discharge (ESD), it is essential to handle the device with care and follow proper ESD precautions. This includes using ESD-safe materials, grounding oneself before handling the device, and using ESD protection devices such as TVS diodes or ESD suppressors.
The maximum allowed drain-source voltage (Vds) for the IRFP250NPBF is 200V, as specified in the datasheet. Exceeding this voltage can damage the device.
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IRFP250NPBF Overview
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