- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IRFP260N
- Part Number IRFP260N
- Manufacturer Infineon
- Pin Count 3
- Part Category MOSFET (N-Channel)
- Package Category Transistor Outline, Vertical
- Footprint Name Transistor Outline, Vertical - TO-247
- Released Date Jan 16, 2020
- Last Modified Date Mar 7, 2023 4:10 PM UTC
- Pinout / Pin List Click Here (Member Only)
IRFP260N Details
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Manufacturer Part Number:
IRFP260N
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Manufacturer:
Infineon Technologies AG
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YTEOL:
4
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Additional Feature:
AVALANCHE RATED
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Avalanche Energy Rating (Eas):
560 mJ
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Case Connection:
DRAIN
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
200 V
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Drain Current-Max (ID):
50 A
IRFP260N Frequently Asked Questions (FAQs)
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The maximum safe operating area (SOA) for the IRFP260N is typically defined by the manufacturer as the region where the device can operate safely without damage. This information is usually provided in the datasheet or application notes. For the IRFP260N, the SOA is typically limited by the maximum drain-source voltage (Vds) and drain current (Id) ratings.
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To ensure proper thermal management of the IRFP260N, it's essential to provide a suitable heat sink, ensure good thermal interface material (TIM) between the device and heat sink, and maintain a low thermal resistance (Rth) between the junction and case. The datasheet provides thermal resistance values and recommended heat sink designs.
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For optimal performance and reliability, it's crucial to follow recommended PCB layout and routing guidelines for the IRFP260N. This includes keeping the power traces short and wide, using a solid ground plane, and minimizing inductance in the drain and source connections. Infineon provides application notes and reference designs that outline these guidelines.
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To protect the IRFP260N from electrostatic discharge (ESD), it's essential to follow proper handling and storage procedures. This includes using ESD-safe materials, grounding oneself before handling the device, and using ESD protection devices such as TVS diodes or ESD suppressors in the circuit design.
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The recommended gate drive circuits and components for the IRFP260N depend on the specific application and switching frequency. Generally, a suitable gate driver IC, such as the Infineon IRS2007, is recommended, along with a proper gate resistor and capacitor selection to ensure reliable and efficient switching.
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IRFP260N Overview
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