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IRFS3004TRL7PP - Infineon

Description: MOSFETs MOSFT 40V 240A 1.2mOhm 160nC Qg

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IRFS3004TRL7PP - Infineon  - 3D model
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IRFS3004TRL7PP Details

  • Manufacturer Part Number:

    IRFS3004TRL7PP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    D2PAK-7

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    290 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    240 A

  • Drain-source On Resistance-Max:

    0.00125 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    380 W

  • Pulsed Drain Current-Max (IDM):

    1610 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFS3004TRL7PP Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFS3004TRL7PP is -40°C to 150°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended operating conditions.
  • Use a multi-layer PCB with a solid ground plane, keep the power and ground traces short and wide, and use shielding or a Faraday cage to minimize EMI.
  • Yes, the IRFS3004TRL7PP is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize ringing and oscillations.
  • Use a voltage regulator or a TVS diode to protect against overvoltage, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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IRFS3004TRL7PP Overview

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IRFS3004TRL7PP Alternates

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Image Part Number Model
Part Image IRFS3004-7PPBF International Rectifier

Power Field-Effect Transistor, 400A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRFS3004-7P Infineon Technologies AG

Power Field-Effect Transistor, 240A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRFS3004-7PPBF Infineon Technologies AG

Power Field-Effect Transistor, 240A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB

Part Image IRFS3004TRL-7PPBF Infineon Technologies AG

Power Field-Effect Transistor, 240A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image AUIRFS3004-7TRR Infineon Technologies AG

Power Field-Effect Transistor, 240A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB

For a full list of alternate parts for IRFS3004TRL7PP, check out Findchips.com