Part Image

IRFS4310ZTRLPBF - Infineon

Description: N-Channel 100 V 120A (Tc) 250W (Tc) Surface Mount D2PAK , 250 W , -55 °C ~ +175 °C (TJ)

Download IRFS4310ZTRLPBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRFS4310ZTRLPBF - Infineon PCB footprint - Other - Other - PG-TO263-3-901_2026-4.2
click to zoom
3D Models
IRFS4310ZTRLPBF - Infineon  - 3D model - Other - PG-TO263-3-901_2026-4.2
click to zoom

IRFS4310ZTRLPBF Details

  • Manufacturer Part Number:

    IRFS4310ZTRLPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Mainland China, Taiwan, UK

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    130 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.006 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    560 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFS4310ZTRLPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFS4310ZTRLPBF is -55°C to 175°C.
  • To ensure reliability, follow the recommended assembly and soldering guidelines, and ensure proper thermal management. Additionally, consider using a thermal interface material to improve heat dissipation.
  • To minimize EMI, use a multi-layer PCB with a solid ground plane, and keep the power and signal traces as short as possible. Also, use a shielded cable or a ferrite bead to filter out high-frequency noise.
  • Yes, the IRFS4310ZTRLPBF is rated for high-voltage applications up to 500V. However, ensure that the device is properly derated for the specific application, and follow the recommended design guidelines for high-voltage circuits.
  • To troubleshoot issues, check the device's thermal performance, ensure proper PCB layout and assembly, and verify the input and output voltage levels. Also, use a thermal camera or an oscilloscope to monitor the device's temperature and voltage waveforms.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRFS4310ZTRLPBF Overview

Use the download button to access the IRFS4310ZTRLPBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFS4, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFS4310ZTRLPBF

Showing 0 results

IRFS4310ZTRLPBF Alternates

Showing results

Image Part Number Model
Part Image IRFS4310ZTRRPBF International Rectifier

Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image AUIRFS4310ZTRR International Rectifier

Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image AUIRFS4310ZTRL Infineon Technologies AG

Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRFS4310ZTRRPBF Infineon Technologies AG

Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image AUIRFS4310Z Infineon Technologies AG

Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

For a full list of alternate parts for IRFS4310ZTRLPBF, check out Findchips.com