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IRFZ14 - Vishay

Description: IRFZ14 N-Channel MOSFET Transistor, 10 A, 60 V, 3-Pin TO-220AB Vishay

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PCB Footprints
IRFZ14 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1_2020
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3D Models
IRFZ14 - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-1_2020
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IRFZ14 Details

  • Manufacturer Part Number:

    IRFZ14

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    40 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFZ14 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFZ14 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the boundaries of the maximum ratings and ensure that the junction temperature (Tj) does not exceed 150°C.
  • The thermal resistance (Rth) of the IRFZ14 can be calculated using the following formula: Rth = (Tj - Ta) / Pd, where Tj is the junction temperature, Ta is the ambient temperature, and Pd is the power dissipation. The datasheet provides the thermal resistance values for different packages and mounting conditions.
  • The recommended gate drive voltage for the IRFZ14 is typically between 10V to 15V, depending on the application and switching frequency. A higher gate drive voltage can reduce the switching losses, but it may also increase the gate charge and power consumption.
  • Yes, the IRFZ14 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the switching frequency does not exceed the recommended maximum frequency (typically around 100 kHz).
  • To protect the IRFZ14 from overvoltage and overcurrent, it's recommended to use a suitable voltage regulator, overvoltage protection (OVP) circuit, and overcurrent protection (OCP) circuit. Additionally, ensure that the device is operated within the recommended maximum ratings and that the PCB layout is designed to minimize parasitic inductance and capacitance.

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IRFZ14 Overview

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Part Image IRFZ14PBF Vishay Intertechnologies

Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRFZ14 Vishay Siliconix

Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB