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IRFZ44NLPBF - Infineon

Description: MOSFET N-Channel 55V 49A TO262 Infineon IRFZ44NLPBF N-channel MOSFET Transistor, 49 A, 55 V, 3-Pin TO-262

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PCB Footprints
IRFZ44NLPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-262-ren1
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3D Models
IRFZ44NLPBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-262-ren1
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IRFZ44NLPBF Details

  • Manufacturer Part Number:

    IRFZ44NLPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-262, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    49 A

  • Drain-source On Resistance-Max:

    0.0175 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    88 pF

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    3.8 W

  • Power Dissipation-Max (Abs):

    94 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFZ44NLPBF Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFZ44NLPBF is typically defined by the manufacturer as the region where the device can operate safely without damage. According to Infineon, the SOA for the IRFZ44NLPBF is defined by the boundaries of Vds = 55V, Id = 50A, and Pd = 125W.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's drain pad, and ensure the heat sink is properly mounted with screws or clips. Additionally, consider the thermal resistance of the heat sink and the PCB, and ensure good airflow around the device.
  • The recommended gate drive voltage for the IRFZ44NLPBF is typically between 10V and 15V. However, it's essential to consult the datasheet and application notes for specific guidance on gate drive voltage and current requirements.
  • Yes, the IRFZ44NLPBF is suitable for high-frequency switching applications. However, it's crucial to consider the device's switching characteristics, such as rise and fall times, and ensure that the gate drive circuitry is capable of providing the required current and voltage to achieve the desired switching frequency.
  • To protect the IRFZ44NLPBF from overvoltage and overcurrent conditions, consider implementing overvoltage protection (OVP) and overcurrent protection (OCP) circuits in your design. These circuits can be implemented using zener diodes, TVS diodes, and current sense resistors, along with control logic to detect and respond to fault conditions.

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IRFZ44NLPBF Overview

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