Part Image

IRFZ48NSTRLPBF - Infineon

Description: INFINEON - IRFZ48NSTRLPBF - MOSFET, N-CH, 55V, 64A, TO-263AB

Download IRFZ48NSTRLPBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRFZ48NSTRLPBF - Infineon PCB footprint - Other - Other - D2PAK
click to zoom
3D Models
IRFZ48NSTRLPBF - Infineon  - 3D model - Other - D2PAK
click to zoom

IRFZ48NSTRLPBF Details

  • Manufacturer Part Number:

    IRFZ48NSTRLPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    190 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    64 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    120 pF

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    3.8 W

  • Power Dissipation-Max (Abs):

    130 W

  • Pulsed Drain Current-Max (IDM):

    210 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFZ48NSTRLPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFZ48NSTRLPBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
  • The recommended gate drive voltage for the IRFZ48NSTRLPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRFZ48NSTRLPBF is suitable for high-frequency switching applications, but ensure the device is operated within its specified switching frequency and duty cycle ratings.
  • Handle the device with ESD-protective equipment, and ensure the device is stored in an ESD-protective package or bag when not in use.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRFZ48NSTRLPBF Overview

Use the download button to access the IRFZ48NSTRLPBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFZ4, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFZ48NSTRLPBF

Showing 0 results

IRFZ48NSTRLPBF Alternates

Showing results

Image Part Number Model
Part Image IRFZ48NSTRLPBF International Rectifier

Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRFZ48NSTRR International Rectifier

Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRFZ48NSTRRPBF International Rectifier

Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRFZ48NSTRL International Rectifier

Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRFZ48NS Infineon Technologies AG

Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

For a full list of alternate parts for IRFZ48NSTRLPBF, check out Findchips.com