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IRL620PBF - Vishay

Description: Power MOSFET, N Channel, 200 V, 5.2 A, 0.8 ohm, TO-220AB, Through Hole

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PCB Footprints
IRL620PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1_2024
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3D Models
IRL620PBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-1_2024
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IRL620PBF Details

  • Manufacturer Part Number:

    IRL620PBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    5.2 A

  • Drain-source On Resistance-Max:

    0.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IRL620PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRL620PBF is -55°C to 175°C.
  • The IRL620PBF is a logic-level MOSFET, which means it can be driven directly by a microcontroller or other low-voltage logic device.
  • The maximum current rating for the IRL620PBF is 3.7A, but this can be affected by the operating temperature and other factors.
  • Yes, the IRL620PBF has a low gate charge and a fast switching speed, making it suitable for high-frequency switching applications up to 1MHz.
  • The typical turn-on time for the IRL620PBF is around 10ns, and the typical turn-off time is around 20ns.

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Part Image IRL620PBF Vishay Siliconix

Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRL620 International Rectifier

Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRL620PBF International Rectifier

Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRL620 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB