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IRL620SPBF - Vishay

Description: IRL620SPBF, N-channel MOSFET Transistor 5.2 A 200 V, 3-Pin D2PAK

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IRL620SPBF Details

  • Manufacturer Part Number:

    IRL620SPBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    D2PAK

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    5.2 A

  • Drain-source On Resistance-Max:

    0.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRL620SPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRL620SPBF is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
  • To ensure proper thermal management, make sure to provide a heat sink or a thermal pad to dissipate heat, and keep the device away from other heat sources. Also, follow the recommended PCB layout and thermal design guidelines.
  • The recommended gate drive voltage for the IRL620SPBF is between 10V to 15V, but it can operate with a minimum of 5V. However, using a higher gate drive voltage can improve switching performance and reduce power losses.
  • Yes, the IRL620SPBF is suitable for high-frequency switching applications up to 1MHz, but it's essential to consider the device's switching losses, gate drive requirements, and thermal management to ensure reliable operation.
  • To protect the IRL620SPBF from overvoltage and overcurrent conditions, use a voltage regulator or a voltage clamp to limit the voltage, and consider adding overcurrent protection devices such as fuses or current sense resistors.

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IRL620SPBF Overview

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Image Part Number Model
Part Image IRL620STRLPBF Vishay Siliconix

Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRL620STRLPBF International Rectifier

Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRL620SPBF Vishay Siliconix

Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image SIHL620S-GE3 Vishay Siliconix

Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRL620S Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.3A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for IRL620SPBF, check out Findchips.com