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IRLHS6342TRPBF - Infineon

Description: MOSFET 30V 1 N-CH HEXFET 15.5mOhms 11nC

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IRLHS6342TRPBF - Infineon PCB footprint - Other - Other - IRLHS6342TRPBF-4
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IRLHS6342TRPBF Details

  • Manufacturer Part Number:

    IRLHS6342TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    14 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    8.7 A

  • Drain-source On Resistance-Max:

    0.0195 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    70 pF

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.1 W

  • Pulsed Drain Current-Max (IDM):

    76 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLHS6342TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLHS6342TRPBF is -55°C to 150°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
  • The recommended gate drive voltage for the IRLHS6342TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRLHS6342TRPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • Handle the device with ESD-protective equipment, use an ESD wrist strap, and ensure the device is stored in an ESD-protective package to prevent damage.

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IRLHS6342TRPBF Overview

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Part Image IRLHS6342TRPBF International Rectifier

Power Field-Effect Transistor, 8.7A I(D), 30V, 0.0195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET