AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas):
110 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
100 V
Drain Current-Max (ID):
42 A
Drain-source On Resistance-Max:
0.014 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-252AA
JESD-30 Code:
R-PSSO-G2
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
140 W
Pulsed Drain Current-Max (IDM):
250 A
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
IRLR3110ZTRLPBF Frequently Asked Questions (FAQs)
The maximum operating temperature range for the IRLR3110ZTRLPBF is -55°C to 150°C.
To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
The recommended gate drive voltage for the IRLR3110ZTRLPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
Yes, the IRLR3110ZTRLPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
Handle the device with ESD-protective equipment, use an ESD wrist strap, and ensure the device is stored in an ESD-protective package to prevent damage.
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IRLR3110ZTRLPBF Overview
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