IRLS640A - onsemi

Description: 9.8 A, 200 V rDS(ON) = 180 mΩ @ VGS = 5 V; Low Gate Charge (Typ. 40 nC); Low Crss (Typ. 95 pF); Fast Switching Speed; 100% Avalanche Tested; Improved dv/dt Capability; Logic-Level Gate Drive

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IRLS640A Overview

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IRLS640A - onsemi

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IRLS640A Overview

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Aluminium Electrolytic Capacitor

Axial Diameter Horizontal Mount

BGA

Chip Array

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Connector

Dual-In-Line Sockets

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Header, Shrouded

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