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IRLZ44NSTRLPBF - Infineon

Description: Infineon IRLZ44NSTRLPBF N-channel MOSFET, 47 A, 55 V HEXFET, 3-Pin D2PAK

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IRLZ44NSTRLPBF - Infineon PCB footprint - Other - Other - D2PAK
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IRLZ44NSTRLPBF - Infineon  - 3D model - Other - D2PAK
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IRLZ44NSTRLPBF Details

  • Manufacturer Part Number:

    IRLZ44NSTRLPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    47 A

  • Drain-source On Resistance-Max:

    0.025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLZ44NSTRLPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLZ44NSTRLPBF is -55°C to 175°C.
  • To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
  • The recommended gate drive voltage for the IRLZ44NSTRLPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRLZ44NSTRLPBF is suitable for switching applications, but ensure that the switching frequency is within the recommended range and that the device is properly cooled.
  • Handle the device with ESD-protective equipment, use an ESD-protected workstation, and follow proper handling and storage procedures to prevent ESD damage.

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IRLZ44NSTRLPBF Overview

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Part Image IRLZ44NSTRLPBF International Rectifier

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Part Image IRLZ44NSPBF Infineon Technologies AG

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Part Image IRLZ44NSTRL International Rectifier

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Part Image IRLZ44NSTRR International Rectifier

Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

For a full list of alternate parts for IRLZ44NSTRLPBF, check out Findchips.com