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IRS23364DSTRPBF - Infineon

Description: Driver 600V 0.35A 6-OUT High and Low Side 3-Phase Brdg Non-Inv 28-Pin SOIC W T/R

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IRS23364DSTRPBF Details

  • Manufacturer Part Number:

    IRS23364DSTRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOIC-28

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    8.38

  • High Side Driver:

    YES

  • Input Characteristics:

    STANDARD

  • Interface IC Type:

    BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER

  • JESD-30 Code:

    R-PDSO-G28

  • JESD-609 Code:

    e3

  • Length:

    17.9 mm

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    28

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Characteristics:

    OPEN-DRAIN

  • Output Peak Current Limit-Nom:

    0.35 A

  • Output Polarity:

    TRUE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    SOP28,.4

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    2.65 mm

  • Supply Voltage-Max:

    20 V

  • Supply Voltage-Min:

    11.5 V

  • Supply Voltage-Nom:

    15 V

  • Supply Voltage1-Max:

    620 V

  • Supply Voltage1-Min:

    2 V

  • Supply Voltage1-Nom:

    15 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Turn-off Time:

    0.75 µs

  • Turn-on Time:

    0.75 µs

  • Width:

    7.5 mm

IRS23364DSTRPBF Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider using a thermistor or thermal sensor to monitor the device temperature.
  • The critical timing parameters include the dead time (td), the rise time (tr), and the fall time (tf). These parameters are critical for ensuring proper switching and minimizing electromagnetic interference (EMI).
  • Use a voltage regulator or a transient voltage suppressor (TVS) to protect against overvoltage conditions. Implement overcurrent protection using a fuse or a current-sensing resistor with a comparator or a dedicated overcurrent protection IC.
  • A bootstrap gate drive circuit or a dedicated gate driver IC (e.g., Infineon's IRS2005S) is recommended. These circuits provide the necessary voltage and current to drive the power MOSFETs efficiently.

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IRS23364DSTRPBF Overview

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