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ISL70024SEHMX - Renesas Electronics

Description: 200V, 7.5A Enhancement Mode GaN Power Transistor

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ISL70024SEHMX - Renesas Electronics  - 3D model
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ISL70024SEHMX Details

  • Manufacturer Part Number:

    ISL70024SEHMX

  • Brand Name:

    Renesas

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DIE

  • Manufacturer Package Code:

    ISLDUMMY00

  • ECCN Code:

    EAR99

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    5

  • Additional Feature:

    HIGH RELIABILITY

  • Case Connection:

    DRAIN SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    7.5 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Feedback Cap-Max (Crss):

    1 pF

  • JESD-30 Code:

    R-XBCC-N7

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Reference Standard:

    RH - 100K Rad(Si)

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

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ISL70024SEHMX Overview

Use the download button to access the ISL70024SEHMX 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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