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IXBH40N160 - LITTELFUSE

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IXBH40N160 - LITTELFUSE  - 3D model
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IXBH40N160 Details

  • Manufacturer Part Number:

    IXBH40N160

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    3

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    33 A

  • Collector-Emitter Voltage-Max:

    1600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    8 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    350 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    310 ns

  • Turn-on Time-Nom (ton):

    260 ns

  • VCEsat-Max:

    7.1 V

IXBH40N160 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXBH40N160 is a standard TO-220 package with a minimum pad size of 70 mils x 70 mils. It's recommended to follow the manufacturer's recommended land pattern to ensure proper thermal performance and reliability.
  • While IXBH40N160 is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 100 kHz. The device is optimized for switching frequencies up to 50 kHz. For higher frequencies, consider using a dedicated high-frequency IGBT or MOSFET.
  • To ensure reliability in high-temperature environments, follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below the maximum rated value of 150°C. Also, consider derating the device's current and voltage ratings according to the manufacturer's recommendations.
  • Yes, you can parallel multiple IXBH40N160 devices to increase current handling, but it's crucial to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current. Additionally, consider the thermal management implications of paralleling devices and ensure that the heat sinking is adequate.
  • The recommended gate drive voltage for IXBH40N160 is between 10 V and 15 V. A higher gate drive voltage can improve switching performance, but it may also increase power consumption and EMI. A lower gate drive voltage may reduce power consumption but may also affect switching performance.

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IXBH40N160 Overview

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