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IXDN55N120D1 - LITTELFUSE

Description: Trans IGBT Module N-CH 1200V 100A 450000mW

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IXDN55N120D1 - LITTELFUSE  - 3D model
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IXDN55N120D1 Details

  • Manufacturer Part Number:

    IXDN55N120D1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    100 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    450 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Finish:

    NICKEL

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    MOTOR CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    570 ns

  • Turn-on Time-Nom (ton):

    170 ns

IXDN55N120D1 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXDN55N120D1 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure reliability in high-temperature applications, it is recommended to derate the device's power dissipation according to the temperature derating curve provided in the datasheet, and to ensure good thermal management through proper heat sinking and airflow.
  • Yes, IXDN55N120D1 can be used in parallel to increase current handling, but it is recommended to ensure that the devices are matched in terms of their electrical characteristics and that the paralleling is done in a way that ensures equal current sharing.
  • The recommended gate drive voltage for IXDN55N120D1 is between 10V and 15V, with a minimum gate drive current of 1A to ensure reliable switching.
  • To protect IXDN55N120D1 from overvoltage and overcurrent, it is recommended to use a voltage clamp or a surge protector, and to implement overcurrent protection through a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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IXDN55N120D1 Overview

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