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IXFA10N80P - LITTELFUSE

Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263

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PCB Footprints
IXFA10N80P - LITTELFUSE PCB footprint - Other - Other - TO-263_2025-1.1
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3D Models
IXFA10N80P - LITTELFUSE  - 3D model - Other - TO-263_2025-1.1
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IXFA10N80P Details

  • Manufacturer Part Number:

    IXFA10N80P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    600 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    1.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AA

  • JESD-30 Code:

    R-PSSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFA10N80P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFA10N80P is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, IXFA10N80P is suitable for high-frequency switching applications up to 100 kHz due to its low switching losses and fast recovery time.
  • To ensure reliable operation of IXFA10N80P in high-temperature environments, it is recommended to derate the maximum junction temperature (Tj) by 1°C per 1000 feet of altitude and to use a suitable heat sink to maintain a safe operating temperature.
  • The recommended gate drive voltage for IXFA10N80P is between 10V and 15V to ensure reliable switching and minimize power losses.
  • Yes, multiple IXFA10N80P devices can be paralleled to increase current handling, but it is recommended to ensure that the devices are matched in terms of their electrical characteristics and that the gate drive signals are synchronized to prevent uneven current sharing.

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IXFA10N80P Overview

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Part Image IXFP10N80P Littelfuse Inc

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB