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IXFH16N120P - LITTELFUSE

Description: Trans MOSFET N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247AD

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PCB Footprints
IXFH16N120P - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (IXFH) Outline_2021
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3D Models
IXFH16N120P - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247 (IXFH) Outline_2021
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IXFH16N120P Details

  • Manufacturer Part Number:

    IXFH16N120P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    800 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.95 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    660 W

  • Pulsed Drain Current-Max (IDM):

    35 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFH16N120P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFH16N120P is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, IXFH16N120P is suitable for high-frequency switching applications up to 100 kHz due to its low switching losses and fast recovery time.
  • To ensure reliable operation of IXFH16N120P in a high-temperature environment, it is recommended to derate the device's current rating by 1.5% per degree Celsius above 25°C, and to use a suitable heat sink to keep the junction temperature below 150°C.
  • Yes, IXFH16N120P is compatible with lead-free soldering processes, with a peak reflow temperature of 260°C.
  • The typical ESD rating of IXFH16N120P is 2 kV human body model (HBM) and 150 V machine model (MM).

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IXFH16N120P Overview

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Part Image IXFH16N120P IXYS Corporation

Power Field-Effect Transistor, 16A I(D), 1200V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD