Part Image

IXFH30N50P - LITTELFUSE

Description: --

Download IXFH30N50P Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
IXFH30N50P - LITTELFUSE  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

IXFH30N50P Details

  • Manufacturer Part Number:

    IXFH30N50P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1200 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    28 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    460 W

  • Pulsed Drain Current-Max (IDM):

    75 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Element Material:

    SILICON

IXFH30N50P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFH30N50P is a pad layout with a minimum size of 2.5mm x 2.5mm, with a 1.5mm x 1.5mm thermal pad in the center. This ensures proper heat dissipation and electrical connection.
  • While the IXFH30N50P has a maximum junction temperature rating of 150°C, it's recommended to derate the device's power handling capability at high temperatures. Consult the datasheet's thermal derating curve to determine the maximum power handling at your specific operating temperature.
  • To ensure proper soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a small amount of solder paste to the PCB pads. Use a soldering technique that minimizes the thermal stress on the device, such as reflow soldering or hand soldering with a low-temperature solder.
  • Littelfuse recommends using a wire bonding method that minimizes the stress on the device's bond wires. A ball-wedge or wedge-wedge bonding method is recommended, with a bond wire diameter of 0.5mm to 1.0mm and a bond force of 10gf to 20gf.
  • Yes, the IXFH30N50P is suitable for high-reliability and automotive applications. It meets the requirements of AEC-Q101, a standard for automotive-grade semiconductor devices. However, it's essential to consult the datasheet and application notes to ensure the device meets your specific application requirements.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

IXFH30N50P Overview

Use the download button to access the IXFH30N50P 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IXFH3, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IXFH30N50P

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

IXFH30N50P Alternates

Showing results

Image Part Number Model
Part Image IXTH30N50P Littelfuse Inc

Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

Part Image IXTH30N50P IXYS Corporation

Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

Part Image IXTV30N50P IXYS Corporation

Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET