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IXFT30N50P - LITTELFUSE

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IXFT30N50P Details

  • Manufacturer Part Number:

    IXFT30N50P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1200 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    28 pF

  • JEDEC-95 Code:

    TO-268AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    460 W

  • Pulsed Drain Current-Max (IDM):

    75 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Element Material:

    SILICON

IXFT30N50P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFT30N50P is a TO-220 package with a minimum pad size of 0.2 inches (5 mm) x 0.15 inches (3.8 mm) and a thermal pad size of 0.2 inches (5 mm) x 0.2 inches (5 mm).
  • To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a small amount of solder paste to the pads. Avoid applying excessive heat or pressure, which can damage the device.
  • The maximum allowed case temperature for the IXFT30N50P is 150°C. Operating the device above this temperature can reduce its reliability and lifespan.
  • Yes, the IXFT30N50P is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, thermal management, and PCB layout to ensure reliable operation.
  • To protect the IXFT30N50P from EOS, use a transient voltage suppressor (TVS) or a metal-oxide varistor (MOV) in parallel with the device. Additionally, ensure that the PCB layout and component selection minimize the risk of electrical overstress.

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IXFT30N50P Overview

Use the download button to access the IXFT30N50P 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IXFT3, or try a keyword search, such as Power Field-Effect Transistors

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