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IXGT32N170 - LITTELFUSE

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IXGT32N170 - LITTELFUSE  - 3D model
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IXGT32N170 Details

  • Manufacturer Part Number:

    IXGT32N170

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.25

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    75 A

  • Collector-Emitter Voltage-Max:

    1700 V

  • Configuration:

    SINGLE

  • JEDEC-95 Code:

    TO-268

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    MOTOR CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    920 ns

  • Turn-on Time-Nom (ton):

    90 ns

IXGT32N170 Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the IXGT32N170 can withstand is 150°C. However, it's recommended to operate the device at a junction temperature below 125°C for optimal performance and reliability.
  • The thermal resistance of the IXGT32N170 can be calculated using the following formula: RθJA = (TJ - TA) / PD, where RθJA is the thermal resistance, TJ is the junction temperature, TA is the ambient temperature, and PD is the power dissipation. The datasheet provides the thermal resistance values for different packages and mounting conditions.
  • The recommended gate drive voltage for the IXGT32N170 is between 10V and 15V. However, the device can tolerate gate drive voltages up to 20V. It's essential to ensure that the gate drive voltage is within the recommended range to prevent damage to the device.
  • Yes, the IXGT32N170 can be used in a parallel configuration to increase the current handling capability. However, it's crucial to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing and potential damage to the devices.
  • The recommended PCB layout for the IXGT32N170 involves using a low-inductance layout, with short and wide traces for the power connections. It's also essential to ensure that the gate drive signal is routed close to the device and that the decoupling capacitors are placed close to the device's power pins.

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IXGT32N170 Overview

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