Please enter a minimum 3 letters or numbers
Technical Content
Part Image

IXTH11P50 - LITTELFUSE

Description: MOSFET -11 Amps -500V 0.75 Rds

Download IXTH11P50 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
IXTH11P50 - LITTELFUSE - PCB symbol
click to zoom
PCB Footprints
IXTH11P50 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (IXTH) Outline
click to zoom
3D Models
IXTH11P50 - LITTELFUSE - 3D model - Transistor Outline, Vertical - TO-247 (IXTH) Outline
click to zoom

IXTH11P50 Details

  • Manufacturer Part Number:

    IXTH11P50

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.75 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    187 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    44 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Element Material:

    SILICON

IXTH11P50 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTH11P50 is a standard SOT-223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure reliable operation of the IXTH11P50 in high-temperature environments, it is recommended to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive PCB material, and ensuring good airflow around the device.
  • The maximum allowed voltage transient for the IXTH11P50 is 100V for a duration of 100ms, as specified in the datasheet. However, it is recommended to follow the voltage rating of the device and avoid voltage transients that exceed the maximum rated voltage.
  • The IXTH11P50 is designed for low-frequency applications up to 100kHz. While it may be possible to use it in high-frequency applications, the device's performance and reliability may be affected. It is recommended to consult with Littelfuse Inc or a qualified engineer for high-frequency application guidance.
  • The recommended storage temperature range for the IXTH11P50 is -40°C to 125°C, as specified in the datasheet. It is recommended to store the devices in a dry, cool place, away from direct sunlight and moisture.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IXTH11P50 Overview

Use the download button to access the IXTH11P50 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IXTH1, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IXTH11P50

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

IXTH11P50 Alternates

Showing results

Image Part Number Model
Part Image IXTH11P50 IXYS Corporation

Power Field-Effect Transistor, 11A I(D), 500V, 0.75ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD