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IXTH8P50 - LITTELFUSE

Description: Trans MOSFET P-CH Si 500V 7A 3-Pin(3+Tab) TO-247AD

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PCB Footprints
IXTH8P50 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (IXTH)_2024
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3D Models
IXTH8P50 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247 (IXTH)_2024
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IXTH8P50 Details

  • Manufacturer Part Number:

    IXTH8P50

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    1.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    175 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    180 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTH8P50 Frequently Asked Questions (FAQs)

  • For optimal thermal performance, it is recommended to use a thermal pad on the bottom of the device and connect it to a large copper area on the PCB. This helps to dissipate heat efficiently. Additionally, keeping the PCB traces and vias away from the thermal pad can reduce thermal resistance.
  • To ensure reliable operation in high-temperature environments, it is essential to follow the recommended derating curves for the device. Additionally, consider using a heat sink or thermal interface material to reduce the junction temperature. It is also crucial to ensure good airflow and avoid thermal hotspots.
  • Exceeding the maximum junction temperature can lead to reduced device lifespan, increased thermal resistance, and potentially even device failure. It is essential to ensure that the device operates within the recommended temperature range to maintain reliability and performance.
  • While the IXTH8P50 is a high-quality device, it may not meet the specific requirements for high-reliability or aerospace applications. It is recommended to consult with Littelfuse Inc or a qualified representative to determine the suitability of the device for such applications.
  • To prevent electrostatic discharge (ESD) damage, it is essential to follow proper handling and storage procedures. Use an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded. Avoid touching the device's pins or exposed internal components.

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IXTH8P50 Overview

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Part Image IXTH8P50 IXYS Corporation

Power Field-Effect Transistor, 8A I(D), 500V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD