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IXTT30N60L2 - LITTELFUSE

Description: Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode Avalanche rated VDSS 600V,ID25 30A,RDS(on) ≤ 240mΩ

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IXTT30N60L2 - LITTELFUSE PCB footprint - Other - Other - TO-268 (IXTT)_2025
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3D Models
IXTT30N60L2 - LITTELFUSE  - 3D model - Other - TO-268 (IXTT)_2025
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IXTT30N60L2 Details

  • Manufacturer Part Number:

    IXTT30N60L2

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.24 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    130 pF

  • JEDEC-95 Code:

    TO-268AA

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    540 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTT30N60L2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTT30N60L2 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, IXTT30N60L2 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
  • To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and staying within the device's recommended operating temperature range.
  • Yes, you can parallel multiple IXTT30N60L2 devices to increase current handling, but it's essential to ensure that the devices are properly matched, and the layout is designed to minimize current imbalance and thermal gradients.
  • The recommended gate drive voltage for IXTT30N60L2 is between 10V and 15V, with a minimum gate drive current of 1A to ensure reliable switching.

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IXTT30N60L2 Overview

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IXTT30N60L2 Alternates

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Image Part Number Model
Part Image IXFT30N60Q Littelfuse Inc

Power Field-Effect Transistor, 30A I(D), 600V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA

Part Image IXTT30N60L2 IXYS Corporation

Power Field-Effect Transistor, 30A I(D), 600V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA

Part Image IXTT30N60P IXYS Corporation

Power Field-Effect Transistor, 30A I(D), 600V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA

Part Image IXFV30N60PS IXYS Corporation

Power Field-Effect Transistor, 30A I(D), 600V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IXTT30N60P Littelfuse Inc

Power Field-Effect Transistor, 30A I(D), 600V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA

For a full list of alternate parts for IXTT30N60L2, check out Findchips.com