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IXXH80N65B4H1 - LITTELFUSE

Description: Trans IGBT Chip N-CH 650V 160A 625000mW 3-Pin(3+Tab) TO-247AD

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PCB Footprints
IXXH80N65B4H1 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (IXXH)
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IXXH80N65B4H1 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247 (IXXH)
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IXXH80N65B4H1 Details

  • Manufacturer Part Number:

    IXXH80N65B4H1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    160 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    625 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    247 ns

  • Turn-on Time-Nom (ton):

    123 ns

  • VCEsat-Max:

    2.1 V

IXXH80N65B4H1 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXXH80N65B4H1 is a TO-247-3L package with a minimum pad size of 5.5mm x 4.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • Yes, the IXXH80N65B4H1 is a high-reliability device that meets the requirements of AEC-Q101, making it suitable for use in automotive and other high-reliability applications.
  • To ensure proper cooling, the IXXH80N65B4H1 should be mounted on a heat sink with a thermal resistance of less than 1°C/W, and the heat sink should be designed to dissipate the maximum power dissipation of the device.
  • Yes, multiple IXXH80N65B4H1 devices can be paralleled to increase current handling, but it is recommended to use a current sharing scheme to ensure equal current distribution among the devices.
  • The maximum allowed voltage transient for the IXXH80N65B4H1 is 650V, and it is recommended to use a voltage clamp or snubber circuit to limit voltage transients to within this range.

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IXXH80N65B4H1 Overview

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