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JANTX2N2907A - Microsemi Corporation

Description: Bipolar Transistors - BJT Small-Signal BJT

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JANTX2N2907A - Microsemi Corporation PCB footprint - Other - Other - TO-18_1
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JANTX2N2907A Details

  • Manufacturer Part Number:

    JANTX2N2907A

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    BCY

  • Package Description:

    TO-18, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    100

  • JEDEC-95 Code:

    TO-206AA

  • JESD-30 Code:

    O-MBCY-W3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.4 W

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    MIL-19500/291M

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    200 MHz

  • Turn-off Time-Max (toff):

    300 ns

  • Turn-on Time-Max (ton):

    45 ns

JANTX2N2907A Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the JANTX2N2907A is -55°C to 150°C.
  • Yes, the JANTX2N2907A is a radiation-hardened transistor, designed to withstand the harsh conditions of space and other high-radiation environments.
  • The maximum collector-emitter voltage (Vce) rating for the JANTX2N2907A is 40V.
  • Yes, the JANTX2N2907A is a high-reliability version of a standard NPN transistor, and it is pin-compatible with other NPN transistors.
  • The typical current gain (hFE) of the JANTX2N2907A is 100-250 at IC = 1mA and VCE = 10V.

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JANTX2N2907A Overview

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Part Image 2N2907A Microchip Technology Inc

Power Bipolar Transistor

Part Image JANTXVF2N2907A Microchip Technology Inc

Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Metal, 3 Pin

Part Image JAN2N2907A Microsemi Corporation (now Microchip)

Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, Metal, 3 Pin

Part Image JANTXV2N2907A Microsemi Corporation (now Microchip)

Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, Metal, 3 Pin

Part Image 2N2907A/TR Microsemi Corporation (now Microchip)

Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, Metal, 3 Pin

For a full list of alternate parts for JANTX2N2907A, check out Findchips.com