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MBRD660CTRLG - onsemi

Description: Extremely Fast Switching; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Marking: B620T, B630T, B640T, B650T, B660T; Platinum Barrier with Avalanche Guardrings Mechanical Characteristics:; Case: Epoxy, Molded; Weight: 0.4 gram (approximately); Lead and Mounting Surface Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds; Extremely Low Forward Drop; AEC-Q101 Qualified and PPAP Capable; NRVBD and SBR Prefixes for Automotive and Other Applications Requir

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MBRD660CTRLG Details

  • Manufacturer Part Number:

    MBRD660CTRLG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China, Malaysia, Vietnam

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FREE WHEELING DIODE

  • Application:

    POWER

  • Breakdown Voltage-Min:

    60 V

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.9 V

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    75 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    3 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    60 V

  • Reverse Current-Max:

    100 µA

  • Reverse Test Voltage:

    60 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

MBRD660CTRLG Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the high-current paths short and wide, and use thermal vias to dissipate heat.
  • Choose an input capacitor with a voltage rating of at least 2x the maximum input voltage, and a capacitance value between 10uF to 100uF. X5R or X7R ceramic capacitors are recommended.
  • The maximum ambient temperature for the MBRD660CTRLG is 85°C. However, the device can operate up to 150°C junction temperature with derating.
  • Yes, the MBRD660CTRLG is qualified to automotive and industrial standards, making it suitable for high-reliability applications. However, additional testing and validation may be required.
  • Check the input voltage, output voltage, and current sense resistor values. Verify the PCB layout and component placement. Use an oscilloscope to check for voltage spikes, ringing, or oscillations.

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MBRD660CTRLG Overview

Use the download button to access the MBRD660CTRLG 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Part Image MBRD660CT-T3-LF Won-Top Electronics Co Ltd

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon, TO-252

Part Image MBRD660CTTRR Vishay Intertechnologies

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon, TO-252AA

Part Image NRVBD660CTRLG onsemi

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Part Image MBRD660CTTRL Vishay Intertechnologies

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 60V V(RRM), Silicon, TO-252AA

Part Image NRVBD660CTG-VF01 onsemi

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For a full list of alternate parts for MBRD660CTRLG, check out Findchips.com