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MJ15023G - onsemi

Description: High Safe Operating Area (100% Tested) - 2 A @ 80 V; High DC Current Gain - hFE = 15 (Min) @ IC = 8 Adc

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MJ15023G Details

  • Manufacturer Part Number:

    MJ15023G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-204 (TO-3)

  • Package Description:

    TO-3, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    1-07

  • Country Of Origin:

    Mexico

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    16 A

  • Collector-Emitter Voltage-Max:

    200 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    5

  • JEDEC-95 Code:

    TO-204AA

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    250 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

MJ15023G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJ15023G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 50-60% of its maximum rating to ensure reliable operation.
  • To ensure the MJ15023G is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is between 0.6-0.8V, and the collector-emitter voltage (Vce) is at least 1-2V above the base-emitter voltage. Additionally, the collector current should be limited to the recommended maximum value to prevent thermal runaway.
  • The recommended heatsink design for the MJ15023G depends on the specific application and power dissipation requirements. However, a general guideline is to use a heatsink with a thermal resistance of 1-2°C/W or lower, and to ensure good thermal contact between the device and the heatsink using a thermal interface material (TIM).
  • While the MJ15023G is primarily designed for linear applications, it can be used in switching applications with some caution. However, the device's switching characteristics, such as its turn-on and turn-off times, may not be optimized for high-frequency switching. Additionally, the device's maximum collector current and power dissipation ratings should be carefully considered to ensure reliable operation.
  • To protect the MJ15023G from electrostatic discharge (ESD), it is recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat, and to ensure that the device is properly grounded during handling and assembly. Additionally, ESD protection devices, such as TVS diodes or ESD protection arrays, can be used to protect the device from ESD events.

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MJ15023G Overview

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Part Image MJ15023 TT Electronics Power and Hybrid / Semelab Limited

Power Bipolar Transistor, 16A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin

Part Image MJ15023 onsemi

Power Bipolar Transistor, 16A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin