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MJD117-1G - onsemi

Description: Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); High DC Current Gain hFE = 2500 (Typ) @ IC = 2.0 Adc; Monolithic Construction With Built-in Base-Emitter Shunt Resistors; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("1" Suffix); Surface Mount Replacements for TIP110-TIP117 Series; Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q

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MJD117-1G Details

  • Manufacturer Part Number:

    MJD117-1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK INSERTION MOUNT

  • Package Description:

    DPAK-3

  • Pin Count:

    4

  • Manufacturer Package Code:

    369

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    2 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    200

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    50 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    25 MHz

MJD117-1G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJD117-1G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 1/4 of the maximum rated power to ensure reliable operation.
  • To ensure the MJD117-1G is properly biased for linear operation, you should follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (VBE) to around 0.7V and the collector-emitter voltage (VCE) to around 1/2 of the supply voltage. Additionally, you should ensure that the device is operated within its recommended operating conditions and that the load is properly matched to the device's output impedance.
  • For optimal performance and reliability, it is recommended to follow good PCB layout practices, such as keeping the device's leads as short as possible, using a solid ground plane, and minimizing thermal resistance. Additionally, a heat sink may be required to ensure the device operates within its recommended temperature range. The datasheet provides guidelines for thermal management, but it's essential to consult with a thermal management expert or perform thermal simulations to ensure optimal design.
  • While the MJD117-1G is primarily designed for linear applications, it can be used in switching applications with some caution. However, the device's switching characteristics, such as its turn-on and turn-off times, may not be optimized for high-frequency switching. Additionally, the device's maximum switching frequency and duty cycle should be carefully evaluated to ensure reliable operation. It's recommended to consult with an applications engineer or perform thorough testing to ensure the device meets the specific switching requirements.
  • To protect the MJD117-1G from electrostatic discharge (ESD), it's essential to follow proper handling and storage procedures. This includes using anti-static wrist straps, mats, and packaging materials, as well as ensuring that the device is stored in a controlled environment. Additionally, it's recommended to use ESD protection devices, such as TVS diodes or ESD protection arrays, in the circuit design to protect the device from ESD events.

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MJD117-1G Overview

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Part Image MJD117-1 Samsung Semiconductor

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin