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MJE170 - onsemi

Description: 3.0 A PNP Bipolar Power Transistor

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MJE170 Details

  • Manufacturer Part Number:

    MJE170

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-225

  • Package Description:

    PLASTIC, CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    3 A

  • Collector-Emitter Voltage-Max:

    40 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    12

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    1.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    50 MHz

MJE170 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE170 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be defined as the region where the device can operate without exceeding its maximum ratings. For the MJE170, a safe operating area can be estimated as Vce ≤ 50V, Ic ≤ 3A, and Pd ≤ 20W.
  • To ensure the MJE170 is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is within the recommended range (typically 0.6-0.8V) and that the collector-emitter voltage (Vce) is sufficient to maintain a linear operating region. A good starting point is to set Vbe = 0.7V and Vce = 10-20V, and then adjust the biasing resistors to achieve the desired operating point.
  • For optimal performance and reliability, it is recommended to follow good PCB layout practices, such as keeping the transistor away from heat sources, using a solid copper ground plane, and minimizing trace lengths and widths. Thermal management is also crucial, and it is recommended to use a heat sink with a thermal resistance of ≤ 10°C/W to keep the junction temperature below 150°C.
  • Yes, the MJE170 can be used as a switch, but it is not optimized for switching applications. When used as a switch, the MJE170 should be operated in saturation mode (Vce ≤ 0.5V) to minimize power dissipation. However, the device's switching speed is limited by its transition frequency (ft) of around 3MHz, and it may not be suitable for high-frequency switching applications.
  • To protect the MJE170 from electrostatic discharge (ESD), it is recommended to follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and storing the devices in anti-static packaging. Additionally, it is recommended to use ESD protection devices, such as TVS diodes or ESD protection arrays, in the circuit to protect the transistor from ESD events.

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