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MRF1517NT1 - NXP

Description: 520 MHz, 8 W, 7.5 V Lateral N-Channel Broadband RF Power MOSFET

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MRF1517NT1 Details

  • Manufacturer Part Number:

    MRF1517NT1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00

  • Manufacturer:

    NXP Semiconductors

  • YTEOL:

    0

  • Case Connection:

    SOURCE

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    4 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    6 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    62.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MRF1517NT1 Frequently Asked Questions (FAQs)

  • The MRF1517NT1 is designed to operate up to 1.7 GHz, making it suitable for various wireless communication systems, including cellular, Wi-Fi, and Bluetooth applications.
  • To optimize the layout and matching network, it's recommended to follow the recommended PCB layout and footprint provided in the datasheet, and use simulation tools such as ADS or AWR to optimize the matching network for maximum power transfer and efficiency.
  • The recommended biasing scheme for the MRF1517NT1 is a voltage-controlled biasing scheme, where the gate voltage is controlled by a voltage regulator or a voltage-controlled voltage source. This allows for optimal biasing and maximum efficiency.
  • To handle thermal management, it's recommended to use a heat sink or a thermal pad to dissipate heat away from the device. The device's thermal resistance (Rth) is specified in the datasheet, and it's essential to keep the junction temperature (Tj) below the maximum rating to ensure reliability and performance.
  • The MRF1517NT1 is designed to handle a maximum output power of 17 W, making it suitable for various wireless communication systems. However, the actual power handling capability may vary depending on the specific application and operating conditions.

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MRF1517NT1 Overview

Use the download button to access the MRF1517NT1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like MRF15, or try a keyword search, such as RF Power Field-Effect Transistors

About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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Part Image MRF1517T1 Freescale Semiconductor

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET