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MTD4N20E-1 - Rochester Electronics LLC

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MTD4N20E-1 Alternates

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Image Part Number Model
Part Image FQD5N20LTM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.8A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image MTD4N20E1 onsemi

4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C, DPAK-3

Part Image FQD5N20LTM onsemi

Power Field-Effect Transistor, 3.8A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD5N20L Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.8A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image MTD4N20ET4 onsemi

Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for MTD4N20E-1, check out Findchips.com