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FQD5N20LTM Overview

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MTD4N20E-1 Rochester Electronics LLC

4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C, DPAK-3

FQD5N20LTM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.8A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

FQD5N20L Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.8A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

MTD4N20ET4 onsemi

Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

MTD4N20E-T4 Motorola Mobility LLC

4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET

For a full list of alternate parts for FQD5N20LTM, check out Findchips.com


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Image	Part Number	Model
	MTD4N20E-1 Rochester Electronics LLC 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C, DPAK-3
	FQD5N20LTM Fairchild Semiconductor Corporation Power Field-Effect Transistor, 3.8A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
	FQD5N20L Fairchild Semiconductor Corporation Power Field-Effect Transistor, 3.8A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
	MTD4N20ET4 onsemi Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	MTD4N20E-T4 Motorola Mobility LLC 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET
For a full list of alternate parts for FQD5N20LTM, check out Findchips.com

FQD5N20LTM - onsemi

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