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NGTB20N60L2TF1G - onsemi

Description: IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V); IGBT tf=67ns typ.; Diode VF=1.5V typ. (IF=20A); Diode trr=70ns typ.; Adaption of full isolation type package; Enhansment type; Maxium junction temperature Tj=175°C

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NGTB20N60L2TF1G - onsemi

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