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NIF9N05CLT3G - onsemi

Description: Diode Clamp Between Gate and Source; ESD Protection - HBM 5000 V; Active Over-Voltage Gate to Drain Clamp; Scalable to Lower or Higher RDS(on); Internal Series Gate Resistance; Pb-Free Packages are Available

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NIF9N05CLT3G Alternates

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Part Image NIF9N05CLT3 onsemi

Power Field-Effect Transistor, 2.6A I(D), 52V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA