NIF9N Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	NIF9N05CLT1G onsemi	1	Diode Clamp Between Gate and Source; ESD Protection - HBM 5000 V; Active Over-Voltage Gate to Drain Clamp; Scalable to Lower or Higher RDS(on); Internal Series Gate Resistance; Pb-Free Packages are Available	SOT223 (3-Pin)	NIF9N05CLT1G	3D model available Symbol and footprint available 3	1 Download Model
	NIF9N05ACLT1G onsemi	1	Power Field-Effect Transistor, 2.6A I(D), 52V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA		NIF9N05ACLT1G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NIF9N05ACLT3G onsemi	1	Power Field-Effect Transistor, 2.6A I(D), 52V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA		NIF9N05ACLT3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NIF9N05CLT3 onsemi	1	Power Field-Effect Transistor, 2.6A I(D), 52V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA		NIF9N05CLT3	3D model not available Symbol and footprint not available 0	0 Build or Request

	NIF9N05CLT3G onsemi	1	Power Field-Effect Transistor, 2.6A I(D), 52V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA		NIF9N05CLT3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NIF9N05CLT1 onsemi	1	Power Field-Effect Transistor, 2.6A I(D), 52V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA		NIF9N05CLT1	3D model not available Symbol and footprint not available 0	0 Build or Request
	NIF9N05CLT4 onsemi	1	Power Field-Effect Transistor, 2.6A I(D), 59V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		NIF9N05CLT4	3D model not available Symbol and footprint not available 0	0 Build or Request

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