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NIF9N05CLT1G - onsemi

Description: Diode Clamp Between Gate and Source; ESD Protection - HBM 5000 V; Active Over-Voltage Gate to Drain Clamp; Scalable to Lower or Higher RDS(on); Internal Series Gate Resistance; Pb-Free Packages are Available

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NIF9N05CLT1G - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT223+3asaqs
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NIF9N05CLT1G - onsemi  - 3D model - SOT223 (3-Pin) - SOT223+3asaqs
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NIF9N05CLT1G Details

  • Manufacturer Part Number:

    NIF9N05CLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-223 (TO-261) 4 LEAD

  • Package Description:

    LEAD FREE, CASE 318E-04, TO-261, 4 PIN

  • Pin Count:

    4

  • Manufacturer Package Code:

    0.0318

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    110 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    52 V

  • Drain Current-Max (ID):

    2.6 A

  • Drain-source On Resistance-Max:

    0.125 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.69 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NIF9N05CLT1G Frequently Asked Questions (FAQs)

  • The maximum junction temperature of NIF9N05CLT1G is 150°C.
  • NIF9N05CLT1G is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
  • The typical gate charge of NIF9N05CLT1G is around 10nC.
  • Yes, NIF9N05CLT1G is suitable for high-frequency switching applications due to its low gate charge, low RDS(on), and fast switching times.
  • No, NIF9N05CLT1G is not a radiation-hardened device. It is a commercial-grade MOSFET.

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NIF9N05CLT1G Overview

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Part Image NIF9N05CLT1 onsemi

Power Field-Effect Transistor, 2.6A I(D), 52V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA