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NIS5132MN3TXG - onsemi

Description: Integrated Power Device; Internal Latching Thermally Protected; No External Current Shunt Required; 9V to 18V Input Range; Internal Charge Pump; Internal Undervoltage Lockout Circuit; Internal Overvoltage Clamp; ESD Ratings: Human Body Model (HBM); 1500V, Machine Model (MM); 200V; These are Pb-Free Devices; Auto Retry Option; 44 mohm Typical

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NIS5132MN3TXG - onsemi

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