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NSS60601MZ4T3G - onsemi

Description: Low Collector-Emitter Saturation Voltage; High DC Current Gain; High Current-Gain Bandwidth Product; Superior gain linearity; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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NSS60601MZ4T3G - onsemi PCB footprint - Other - Other - NSS60601MZ4T3G-2
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NSS60601MZ4T3G Details

  • Manufacturer Part Number:

    NSS60601MZ4T3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223 (TO-261) 4 LEAD

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN

  • Pin Count:

    4

  • Manufacturer Package Code:

    0.0318

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    6 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    50

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

  • Turn-off Time-Max (toff):

    1475 ns

  • Turn-on Time-Max (ton):

    200 ns

NSS60601MZ4T3G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider derating the device's power dissipation at high temperatures.
  • The maximum allowed voltage on the input pins is 5.5V, which is the absolute maximum rating. However, for reliable operation, it's recommended to keep the input voltage below 5V.
  • Yes, but ensure the device is properly sealed or conformally coated to prevent moisture ingress. Also, follow the recommended storage and handling guidelines to prevent moisture-related damage.
  • Check the input voltage, output load, and PCB layout. Verify that the device is properly soldered and that there are no shorts or opens on the PCB. Use an oscilloscope to measure the output voltage and check for any anomalies.

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NSS60601MZ4T3G Overview

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Part Image NSS60601MZ4T1G onsemi

Small Signal Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA