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NST45011MW6T1G - onsemi

Description: Gain matched to 10%, Typical 2%; Vbe matched to 2.0 mV typical 0.5 mV; AEC-Q101 Qualified and PPAP Capable; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

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NST45011MW6T1G - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - NST45011_SC70-6
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NST45011MW6T1G Details

  • Manufacturer Part Number:

    NST45011MW6T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88/SC70-6/SOT-363 6 LEAD

  • Package Description:

    ULTRA SMALL, CASE 419B-02, SC-88, 6 PIN

  • Pin Count:

    6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    45 V

  • Configuration:

    SEPARATE, 2 ELEMENTS

  • DC Current Gain-Min (hFE):

    200

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.38 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

NST45011MW6T1G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The SOA is typically defined by the device's voltage and current ratings. For the NST45011MW6T1G, the SOA is limited by the maximum voltage rating of 450V and the maximum current rating of 11A.
  • Use proper ESD handling procedures, such as wearing an ESD strap, using ESD-safe materials, and storing the device in an ESD-safe environment.
  • A gate drive voltage of 10-15V and a current of 1-2A is recommended for optimal switching performance. However, the specific requirements may vary depending on the application and circuit design.

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NST45011MW6T1G Overview

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