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NTBV45N06LT4G - onsemi

Description: Higher Current Rating; Lower RDS(on); Lower VDS(on); Lower Capacitances; Lower Total Gate Charge; Tighter VSD Specification; Lower Diode Reverse Recovery Time; Lower Reverse Recovery Stored Charge; Qualified to AEC Q101; PPAP Capable

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Part Image NTB45N06L Rochester Electronics LLC

45A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3

Part Image NTB45N06LT4 onsemi

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Part Image NTB45N06LT4G onsemi

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Part Image NTB45N06LG onsemi

Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET