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NTD20P06LG - onsemi

Description: Obsolete - Single P-Channel Power MOSFET -60V, -15.5A, 150mΩ

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NTD20P06LG Details

  • Manufacturer Part Number:

    NTD20P06LG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Package Description:

    DPAK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    304 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    15.5 A

  • Drain-source On Resistance-Max:

    0.15 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    54 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTD20P06LG Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the NTD20P06LG is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 5V, and the drain-source voltage (Vds) should be between 10V and 20V. Additionally, the gate current (Ig) should be limited to 10mA or less.
  • To minimize parasitic inductance and capacitance, it's recommended to use a compact PCB layout with short, wide traces. The drain and source pins should be connected to a large copper area to reduce inductance. Additionally, the gate pin should be connected to a low-impedance source to minimize ringing.
  • Yes, the NTD20P06LG can be used in high-frequency switching applications up to 1MHz. However, it's essential to ensure that the PCB layout is optimized for high-frequency operation, and the device is properly biased and cooled.
  • To protect the NTD20P06LG from ESD, it's recommended to use ESD protection devices such as TVS diodes or ESD protection arrays. Additionally, handling the device with ESD-safe materials and following proper ESD handling procedures can help prevent damage.

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NTD20P06LG Overview

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Part Image NTD20P06LT4G onsemi

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Part Image NTD20P06LT4G Rochester Electronics LLC

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Part Image NTDV20P06LT4G-VF01 onsemi

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