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NTD20P06LT4G - onsemi

Description: Withstands High Energy in Avalanche and Commutation Modes; Low Gate Charge for Fast Switching; RoHS Compliant

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NTD20P06LT4G - onsemi  - 3D model
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NTD20P06LT4G Details

  • Manufacturer Part Number:

    NTD20P06LT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Package Description:

    DPAK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China, Malaysia, Vietnam

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    304 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    15.5 A

  • Drain-source On Resistance-Max:

    0.15 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    54 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NTD20P06LT4G Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the NTD20P06LT4G is 150°C. However, it's recommended to operate the device at a junction temperature below 125°C for optimal performance and reliability.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 5V, and the drain-source voltage (Vds) should be between 10V and 20V. Additionally, the device should be operated within the recommended operating area to prevent overheating and ensure reliable operation.
  • For optimal thermal performance, it's recommended to use a PCB with a thermal pad and a heat sink. The device should be mounted on a copper plane with a minimum size of 1 inch x 1 inch. Additionally, a thermal interface material (TIM) should be used to improve heat transfer between the device and the heat sink.
  • To protect the NTD20P06LT4G from ESD, it's recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging, and ensure that all equipment and tools are properly grounded. Additionally, an ESD protection diode can be used to protect the device from ESD events.
  • The recommended gate resistor value for the NTD20P06LT4G is between 10 ohms and 100 ohms. However, the optimal value may vary depending on the specific application and operating conditions. It's recommended to consult the application note or contact onsemi support for more information.

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NTD20P06LT4G Overview

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